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The material type of sapphire (very hard) has to work up (cutting, drilling, etc.) by low velosity of rotation. I don't think that your “cracking” is depend from annealing. But if you want to anneal the sapphire: vacuum, 1800 °C, 24h.
|Synthetic sapphire finishing|
|1) if sapphire is subjected to essentially constant tension of e.g. 350 MPa, does it experience fatigue? 2) Can you make a sapphire plate, whose width is given by a given Gaussian function (maximum e.g. 40 mm in the center), thickness about 1 mm, and length about 200 mm?|
|We have some sapphire wafers that are about .800" in dia. x .1" thick. We are drilling holes in these wafers from .066" dia. to .010" dia. The wafers are cracking so we need to anneal them. What is the process for annealing sapphire?|
|What is the difference between “random orientation” and a specific orientation (C-axis is not always the best, A-plane is actually easier to grind and polish, etc.).|
|I have been polishing c-plane sapphire using alumina slurry and have been getting around 12 um/hr removal rate. I am trying now to polish A plane sapphire, but my removal rate dropped considerably to less than 4 um/hr? Do the A plane and C plane polish differently?|